阅读材料
一般文献
复合半导体材料
金属-半导体结书籍
异质结
外延: CBE vs MBE
非匹配外延 - 假晶层
III-族 氮化物
场效应管
量子结构
异质结双极性晶体管(HBTs)
光电子学 - 一般课程
光学复合过程
半导体光学色散计算
光子晶体
发光二极管-一般课程
谐振和微腔 LED
氮化物 LEDs
白光 LED, 固体照明
荧光物
有机 LED
硅中的复合
晶体生长
激光二极管 - 一般课程
垂直腔面发光激光二极管
一般书籍
Shur, M. S. Physics of Semiconductor Devices. Englewood Cliffs, N.J.: Prentice-Hall, 1990.
Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, N.J.: Prentice-Hall, 1991.
Sze, S. M. Physics of Semiconductor Devices. 2nd ed. New York: Wiley, 1981.
———. Semiconductor Devices, Physics, and Technology. New York: Wiley, 1985.
Sze, S. M., ed. High Speed Semiconductor Devices. New York: Wiley, 1990.
复合半导体材料
书籍
Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: John Wiley & Sons, 1992.
Berger, Lev I. Semiconductor Materials. Boca Raton: CRC Press, 1997.
Madelung, Otfried. Physics of III-V Compounds. New York: John Wiley & Sons, 1964.
———. Semiconductors - Basic Data. 2nd rev. ed. Berlin: Springer, 1996.
Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, N.J.: Prentice Hall, 1991.
Madelung, O., H. Weiss, and M. Schultz, eds. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume A: Physics of Group IV Elements and III-V Compounds. Berlin: Springer, 1982.
———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume B: Physics of II-VI and I-VII Compounds, Semi-Magnetic Semiconductors. Berlin: Springer, 1982.
———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 22, Subvolume A: Intrinsic Properties of Group IV Elements and III-V, II-VI, and IV Compounds. Berlin: Springer, 1987.
期刊论文
Jelenski, A. "Gallium Nitride-New Material for Microwave and Optoelectronics." Conference Proceedings of the IEEE: 12th International Conference on Microwaves and Radar. MIKON 1998 4 (1998): 147-58.
Ramos, L. E., L. K. Teles, L. M. R. Scolfaro, J. L. P. Castineira, A. L. Rosa, and J. R. Leite. "Structural, Electronic, and Effective-Mass Properties of Silicon and Zinc-Blende Group-III Nitride Semiconductor Compounds." Physical Review B: Condensed Matter and Materials Physics 63, no. 16 (2001). 165210/1-1015.
有关金属半导体结书籍
Books
Hess, K. "Diffusive Transport and Thermionic Emission: Appendix G." In Advanced Theory of Semiconductor Devices. New York: Prentice-Hall, 1988.
Shur, M. S. Physics of Semiconductor Devices. Englewood Cliffs, N.J.: Prentice-Hall, 1990. Chapter 2 and section 2.9. [General Discussion]
Singh, J. Semiconductor Devices: An Introduction. New York: McGraw-Hill, 1994. Chapter 6, Section 6.2. [General Discussion]
Smith, R. A. Semiconductors. London: Cambridge Univeristy Press, 1961. Section 8.12. [General Discussion]
Sze, S. M. Physics of Semiconductor Device. 2nd. ed. New York: Wiley, 1981. Chapter 5. [Very Complete Discussion]
———. Semiconductor Devices, Physics, and Technology. New York: Wiley, 1985. Section 5.1. [General Discussion]
Yang, E. S. "Thermionic Emission: Appendix A." In Microelectronic Devices. New York: McGraw-Hill, 1988.
异质结
书籍
见一般文献
文献
Cook, P., E. Martinez, J. Tantillo, and F. L. Schuermeyer. "Band Edge Alignment in Heterstructures." Applied Physics Letters 55, no. 18 (October 1989): 1877-1878.
Chua, S. J., W. J. Fan, S. J. Xu, and X. H. Zhang. "Band Offsets at the InAlGaAs/InAlAs (001) Heterostructures Lattice Matched to an InP Substrate." Journal of Applied Physics 83, no. 11 (June 1998): 5852-5854.
Huijser, A., J. Van Laar, and T. L. Van Rooy. "Electronic Surface Properties of UHV-Cleaved III-V Compounds." Surface Science 62 (1977): 472-486.
Morris, L. L., and R. H. Williams. "Measurement of Conduction Band Offsets throughSchottky Diode Transport Measurements." Applied Physics Letters 63, no. 3 (January 1993): 291-293.
外延: CBE和MBE
Garcia, J. Ch. "Potential Prospects of CBE Technology Compared to MBE as Production Tool for Microwave Devices." Journal of Crystal Growth 188 (1998): 343-348.
非匹配外延－假晶层
Fitzgerald, E. A. "Dislocation in Strained-layer Epitaxy: Theory, Experiment, and Applications." Materials Science Reports 7 (1991): 87-142.
A good overview of the topic.
Chyi, Jen-Inn, Jia-Lin Shieh, Chia-Song Wu, Ray-Ming Lin. Jen-Wei Pan, Yi-Jen Chan, and Chun-Hong Lin. "Characteristics of In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs using InAlAs Buffers." Jpn. J. Appl. Phys. 33 (1994): L1574-L1576.
An example of step grading.
Zaknoune, M., Y. Cordier, S. Bollaert, D. Ferre, D. Theron, and Y. Crosnier. "0.1µm High Performance Metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs Using Inverse Step InAlAs Buffer." Electronics Lett. 35 (1999): 1670-1671.
An example of linear grading.
III族氮化物
Mohammad, S. N., and H. Morkoc. "Progress and Prospects of Group-III Nitride Semiconductors." Progress in Quantum Electronics 20 (1996): 361-525.
A good overall review of the field.
Monemar, B., and G. Pozina. "Group III-nitride Based Hetero and Quantum Structures." Progress in Quantum Electronics 24 (2000): 239-290.
Another good review article on the wide bandgap nitrides.
Jelenski, A. "Gallium Nitride - New Material for Microwave and Optoelectronics."
场效应管（FET）
见异质结双极性晶体管(HBTs)的最后两项。
Bollaert, S., Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, and A. Cappy. "HEMT's Capability for Millimeter-wave Applications." Annals of Telecommunications 56 (2001): 15-26.
Van Hove, M., J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, and R. Menozzi. "Material and Process Related Limitations of InP HEMT Performance." Materials Science and Engineering B B44 (1997): 311-315.
Parikh, P. A., P. M. Chavarkar, and U. K. Mishra. "GaAs MESFETs on a Truly Insulating Buffer Layer: Demonstration of the GaAs on Insulator Technology." IEEE Elect. Dev. Lett. 18 (1997): 111-113.
Tzeng, S. Y., M. J. Cich, R. Zhao, H. Feick, and E. R. Weber. "Generation-recombination Low-frequency Noise Signatures in GaAs Metal-semiconductor Field Effect Transistors on Laterally Oxidized AlAs." Appl. Phys. Lett. 82 (2001): 1063-1065.
量子结构
Leyronas, X. and M. Combescot. "Quantum Wells, Wires, and Dots with Finite Barrier: Analytical Expressions for Bound States." Solid State Comm. 119 (2001): 631-635.
异质结双极性晶体管 (HBT)
Houston, P. A.. "High-frequency Heterojunction Bipolar Transistor Device Design and Technology." Electronics and Communication Engineering Journal 12 (October 2000): 220-228.
Delage, S. L. "Heterojunction Bipolar Transistors for Millimeter Waves Applications: Trends and Achievements." Annals of Telecommunications 56 (2001): 5-14.
Pedrotti, K., K. Runge, S. Beccue, R. Pierson, A. Price, D. Wu, R. Yu, P. Zampardi, and K. C. Wang. "High-speed HBT Technologies for Optical Communication." In High-Speed Semiconductor Lasers for Communication. Edited by N. S. Kwong, and R. Nagarajan. Proceedings of SPIE 3018 (1997), SPIE, Bellingham, WA. Pp. 198-209, TA1700.H54.
Hurkx, G. A. M. "The Relevance of fT and fmax for the Speed of a Bipolar CE Amplifier Stage." IEEE Trans. Electron Dev. 44, no. 197. Pp. 775-781.
Ashburn, P. "Materials and Technology Issues for SiGe Heterojunction Bipolar Transistors." Materials Science in Semiconductor Processing 4 (2001): 521-527.
这是一个相当新的 Si HBT的综述.
Paul, D. J. "Silicon Germanium Heterostructures in Electronics: The Present and the Future." Thin Solid Films 321 (1998): 172-180.
FETs as well as HBTs. Older but still relevant.
Robertson, I. D., and S. Lucyszyn. RFIC and MMIC Design and Technology. UK: Institute of Electrical Engineers, Herts, 1988.
Older reference but still relevant in general issues and even fabrication technology. Deals with FETs and HBTs.
光电子学：一般教材
Coldren, L. A., and S. W. Corzine. "Diode Lasers and Photonic Integrated Circuits." New York: Wiley Interscience, 1995.
Roencher, E., and B. Vorge. "Optoelectronics." Cambridge, England: Cambridge University Press, 2002.
Chang, Shun Lien. "Physics of Optoelectronic Devices." New York: John Wiley, 1995.
Bhattacharya, Pallab. "Semiconductor Optoelectronic Devices, 2nd ed." Upper Saddle River, New Jersey: Prentice-Hall, 1997.
光学复合过程
Varshni, Y. P. "Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors(I)." Phys. Stat. Sol. 19 (1967): 459-514.
An extensive overview of optical processes in semiconductors, with emphasis on radiative recombination.
Beattle, A. R., P. T. Landsberg. "Auger Effect in Semiconductors." Proceedings of the Royal Society of London, Series A: Mathematical and Physical Sciences 249 (1959): 16-29.
A classic treat is on Auger recombination.
Takeshima, Masumi. "Auger Recombination in InAs, GaSb, InP, and GaAs." J. Appl. Phys. 43 (1972): 4114-4119.
Useful information (material parameters and theory) on Auger recombination in some important binary compounds.
Keevers, M. J., Green, M. A. "Efficiency Improvements of Silicon Solar Cells by the Impurity Photovoltaic Effect." J. Appl. Phys. 75 (1994): 4022-4031.
An interesting proposal for using mid-gap levels to improve device performance (see also the next reference.)
Luque, A., A. Martf. "Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels." Physical Review Letters 78 (1997): 5014-5017.
半导体中的光学色散关系的计算
Adachi, S. "Model Dielectric Constants of GaP, GaAs, SaSb, InP, InAs, InSb." Physical Review B 35 (1987): 7454-7463.
———. "Optical Properties of In1-xGaxAsyP1-y Alloys." Physical Review B 39(1989): 12612-12621.
———. "Optical Dispersion Relations for GaP, GaAs, SaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y." J. Appl. Phys. 66 (1989): 6030-6040.
Linnik, M., and A. Christou. "Calculations of Optical Properties for Quanternary III-V Semiconductor Alloys in the Transparent Region and Above (0.2 - 4.0 eV)." Physica B 318 (2002): 140-161
光子晶体有关论文
Forchel, A., M. Kamp, Reithmaier, et. al. "Photonic Crystals for Optoelectronic Devices." In "Physics and Simulation of Optoelectronic Devices IX." Edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. Proceedings of the SPIE 4283 (2001): 406-414.
Krauss, T. F., and R. M. De La Rue. "Photonic Crystals in the Optical Regime — Past, Present, and Future." Progress in Quantum Electronics 23 (1999): 51-59.
Yablonovitch, E. "Inhibited Spontaneous Emission in Solid-State Physics and Electronics." Physical Review Lett. 58 (1987): 2059-2062.
John, S. "Strong Localization of Photons in Certain Disordered Dielectric Superlattices." Physical Review Lett. 58 (1987): 2486-2489.
Meade, R. D., A. Devenyi, J. D. Joannopoulos, et. al. "Novel Applications of Photonic Band Gap Materials: Low-loss Bends and High G Cavities." J. Appl. Phys. 75 (1994): 4753-4755.
Happ., T. D., M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel. "Bent Laser Cavity Based on 2D Photonic Crystal Waveguide." Electronics Letters 36 (2000): 324-325.
Mekis A., J. C. Chen, and I. Kurland, et. al. "High Transmission through Sharp Bends in Photonic Crystal Waveguides." Physical Review Lett. 77 (1996): 3787-3790.
Cheng, C. C., and A. Scherer. "Lithographic Band Gap Tuning in Photonic Bandgap Crystals." J. Vac. Sci. Technol. B 14 (1996): 4110-4114.
Smith, C. J. M., H. Benisty, S. Oliver, et. al. "Low-Loss Channel Waveguides with two-dimensional Photonic Crystal Boundaries." Appl. Phys. Let. 77 (2000): 2813-2815.
Joannopolous, J. D., R. D. Meade, and J. N. Winn. Photonic Crystals: Molding theFlow of Light. Princeton, NJ: Princeton University Press, 1995.
LED一般教材
Bergh, A. A. Light Emitting Diodes. Oxford: Clarendon Press, 1976.
Gillesen, K., and W. Schairer. Light Emitting Diodes: An Introduction. Prentice-Hall, 1987, ASIN 0135365333.
Schubert, E. F. Light Emitting Diodes. Cambidge, England: Cambridge University Press, 2003.
谐振和微腔LED有关论文
Delbeke, D., et. al. "High Efficiency Semiconductor Resonant-cavity Light-emitting diodes: A Review." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 189-206.
Royo, P., et. al. "Analytical Calculation of the Extraction Efficiency of Micro-cavity light-emitting Diodes for Display and Fiber Coupling Applications." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 207-218.
Ryu, H., et. al. "Enhancement of Light Extraction from Two-dimensional Photonic Crystal Slab Structures." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 231-237.
Rattier, M., et. al. "Toward Ultra high-efficiency Aluminum Oxide Microcavity light-emitting Diodes: Guided Mode Extraction by Photonic Crystals." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 238-247.
氮化物LED有关论文
Mukai, T. "Recent Progress in Group-III Nitride Light-emitting Diodes." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 264-270.
Han, J., and A. V. Nurmikko. "Advances in AlGaInN Blue and Ultraviolet Light Emitters." IEEE J. Selected Topics on Quantum Electronics 8 (2002): 289-297.
Orton, J. W., and C. T. Foxton. "Group III Nitride Semiconductors for Short Wavelength Light-emitting Devices." Rev. Prog. Phys. 61 (1998): 1-75.
白光LED和固态照明
Steigerwald, D. A., et. al. "Illumination with Solid State Lighting Technology." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 310-320.
Muthu, S., et al. "Red, Green, and Blue LEDs for White Light Illumination." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 333-338.
荧光材料
Ronda, C. R., T. Juestel, and H. Nikol. "Rare Earth Phosphors: Fundamentals and Applications." Journal of Alloys and Compounds (1998): 275-277 and 669-76.
有机LED
Patel, N. K., S. Cina, and J. H. Burroughes. "High-efficiency Organic Light-emitting Diodes." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 346-61.
Tessler, N. "Lasers Based on Semiconducting Organic Materials." Advanced Materials 11, no. 5 (1999): 363-70.
Heeger, A. J. "Light Emission from Semiconducting Polymers: Light-emitting Diodes, Light-emitting Electrochemical Cells, Lasers and White Light for the Future." Solid-State-Communications 107 (1998): 673-679.
Kalinowski, J. "Electroluminescence in Organics." Journal of Physics D Applied Physics 32 (1999): R179-249.
硅中的复合过程
Schroder, D. K. "Carrrier Lifetimes in Silicon." IEEE Trans. on Electron Dev. 44 (1997): 160-170.
晶体生长
Moon, R. L. "MOVPE: Is There Any Other Technology for Optoelectronics." Journal of Crystal Growth 170 (1997): 1-10.
激光二极管：一般教材
Coldren, L. A., and S. W. Corzine. Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
The best reference on lasers; the most up to date and comprehensive on in-plane lasers; more limited on VCSELs. For VCSELs see the references below.
Additional sources: See the references given with the laser structures shown onthe slides from Lectures 21, 22, and 23.
VCSEL
Iga, K. "Vertical-Cavity Surface-Emitting Laser - Progress and Prospects." IEICE Trans. Electron. E85-C , no. 1 (2002): 10-20.
Iga is credited with inventing, or at least popularizing, the VCSEL.
Chang, C. H., L. Chrostowski, and C. J. Chang-Hasnain. "Parasitics and Design Considerations on Oxide-Implant VCSELs." IEEE Photonics Technology Letters 13, no. 12 (2001): 1274-1276.
Gustavsson, J. S., J. A. Vukusic, J. Bengtsson, and A. Larsson. "A Comprehensive Model for Modal Dynamics of Vertical-Cavity Surface-Emitting Lasers." IEEE J. Quant. Electr. 38, no. 2 (2002): 203-212.
A good reference on VCSEL small and large signal operation. Complements the material in Coldren and Corzine above.
SPIE Proceedings Vol. 4286, published in 2001 and Vol. 4649, published in 2002 have some good VCSEL articles, including:
Note: SPIE holds annual conferences reviewing many topics in the general area of optoelectronics and publishes the proceedings. These proceedings are often good places to start a search for references.
Stevens, R., et. al. "Quest for Very High-speed VCSELs: Pitfalls and Clues." Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Lei. Proceedings of SPIE 4286 (2001): 71-79.
Wasserbauer, J. G., et. al. "High Speed VCSELs for Next-Generation Telecommunications Links." Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Leis. Proceedings of SPIE 4286 (2001): 80-95.
Grabherr, M., D. Wiedenmann, R. King, R. Jager, and B. Schneider. "Speed it Upto 10 Gb/s and Flip Chip it: VCSELs Today." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 11-18.
Zhang, X., et. al. "Advancements in the Design and Production of VCSELs at AXT." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 111-120.
Eitel, S., et. al. "Multimode VCSELs for High Bit-rate and Transparent Low-costfiber-optic Links." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 183-190.
Unold, H. J., et. al. "Single-mode VCSELs." In Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 218-229.
复合半导体材料
金属-半导体结书籍
异质结
外延: CBE vs MBE
非匹配外延 - 假晶层
III-族 氮化物
场效应管
量子结构
异质结双极性晶体管(HBTs)
光电子学 - 一般课程
光学复合过程
半导体光学色散计算
光子晶体
发光二极管-一般课程
谐振和微腔 LED
氮化物 LEDs
白光 LED, 固体照明
荧光物
有机 LED
硅中的复合
晶体生长
激光二极管 - 一般课程
垂直腔面发光激光二极管
一般书籍
Shur, M. S. Physics of Semiconductor Devices. Englewood Cliffs, N.J.: Prentice-Hall, 1990.
Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, N.J.: Prentice-Hall, 1991.
Sze, S. M. Physics of Semiconductor Devices. 2nd ed. New York: Wiley, 1981.
———. Semiconductor Devices, Physics, and Technology. New York: Wiley, 1985.
Sze, S. M., ed. High Speed Semiconductor Devices. New York: Wiley, 1990.
复合半导体材料
书籍
Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: John Wiley & Sons, 1992.
Berger, Lev I. Semiconductor Materials. Boca Raton: CRC Press, 1997.
Madelung, Otfried. Physics of III-V Compounds. New York: John Wiley & Sons, 1964.
———. Semiconductors - Basic Data. 2nd rev. ed. Berlin: Springer, 1996.
Swaminathan, V., and A. T. Macrander. Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, N.J.: Prentice Hall, 1991.
Madelung, O., H. Weiss, and M. Schultz, eds. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume A: Physics of Group IV Elements and III-V Compounds. Berlin: Springer, 1982.
———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 17, Subvolume B: Physics of II-VI and I-VII Compounds, Semi-Magnetic Semiconductors. Berlin: Springer, 1982.
———. Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology. Group III: Crystal and Solid State Physics. Volume 22, Subvolume A: Intrinsic Properties of Group IV Elements and III-V, II-VI, and IV Compounds. Berlin: Springer, 1987.
期刊论文
Jelenski, A. "Gallium Nitride-New Material for Microwave and Optoelectronics." Conference Proceedings of the IEEE: 12th International Conference on Microwaves and Radar. MIKON 1998 4 (1998): 147-58.
Ramos, L. E., L. K. Teles, L. M. R. Scolfaro, J. L. P. Castineira, A. L. Rosa, and J. R. Leite. "Structural, Electronic, and Effective-Mass Properties of Silicon and Zinc-Blende Group-III Nitride Semiconductor Compounds." Physical Review B: Condensed Matter and Materials Physics 63, no. 16 (2001). 165210/1-1015.
有关金属半导体结书籍
Books
Hess, K. "Diffusive Transport and Thermionic Emission: Appendix G." In Advanced Theory of Semiconductor Devices. New York: Prentice-Hall, 1988.
Shur, M. S. Physics of Semiconductor Devices. Englewood Cliffs, N.J.: Prentice-Hall, 1990. Chapter 2 and section 2.9. [General Discussion]
Singh, J. Semiconductor Devices: An Introduction. New York: McGraw-Hill, 1994. Chapter 6, Section 6.2. [General Discussion]
Smith, R. A. Semiconductors. London: Cambridge Univeristy Press, 1961. Section 8.12. [General Discussion]
Sze, S. M. Physics of Semiconductor Device. 2nd. ed. New York: Wiley, 1981. Chapter 5. [Very Complete Discussion]
———. Semiconductor Devices, Physics, and Technology. New York: Wiley, 1985. Section 5.1. [General Discussion]
Yang, E. S. "Thermionic Emission: Appendix A." In Microelectronic Devices. New York: McGraw-Hill, 1988.
异质结
书籍
见一般文献
文献
Cook, P., E. Martinez, J. Tantillo, and F. L. Schuermeyer. "Band Edge Alignment in Heterstructures." Applied Physics Letters 55, no. 18 (October 1989): 1877-1878.
Chua, S. J., W. J. Fan, S. J. Xu, and X. H. Zhang. "Band Offsets at the InAlGaAs/InAlAs (001) Heterostructures Lattice Matched to an InP Substrate." Journal of Applied Physics 83, no. 11 (June 1998): 5852-5854.
Huijser, A., J. Van Laar, and T. L. Van Rooy. "Electronic Surface Properties of UHV-Cleaved III-V Compounds." Surface Science 62 (1977): 472-486.
Morris, L. L., and R. H. Williams. "Measurement of Conduction Band Offsets throughSchottky Diode Transport Measurements." Applied Physics Letters 63, no. 3 (January 1993): 291-293.
外延: CBE和MBE
Garcia, J. Ch. "Potential Prospects of CBE Technology Compared to MBE as Production Tool for Microwave Devices." Journal of Crystal Growth 188 (1998): 343-348.
非匹配外延－假晶层
Fitzgerald, E. A. "Dislocation in Strained-layer Epitaxy: Theory, Experiment, and Applications." Materials Science Reports 7 (1991): 87-142.
A good overview of the topic.
Chyi, Jen-Inn, Jia-Lin Shieh, Chia-Song Wu, Ray-Ming Lin. Jen-Wei Pan, Yi-Jen Chan, and Chun-Hong Lin. "Characteristics of In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs using InAlAs Buffers." Jpn. J. Appl. Phys. 33 (1994): L1574-L1576.
An example of step grading.
Zaknoune, M., Y. Cordier, S. Bollaert, D. Ferre, D. Theron, and Y. Crosnier. "0.1µm High Performance Metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs Using Inverse Step InAlAs Buffer." Electronics Lett. 35 (1999): 1670-1671.
An example of linear grading.
III族氮化物
Mohammad, S. N., and H. Morkoc. "Progress and Prospects of Group-III Nitride Semiconductors." Progress in Quantum Electronics 20 (1996): 361-525.
A good overall review of the field.
Monemar, B., and G. Pozina. "Group III-nitride Based Hetero and Quantum Structures." Progress in Quantum Electronics 24 (2000): 239-290.
Another good review article on the wide bandgap nitrides.
Jelenski, A. "Gallium Nitride - New Material for Microwave and Optoelectronics."
场效应管（FET）
见异质结双极性晶体管(HBTs)的最后两项。
Bollaert, S., Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, and A. Cappy. "HEMT's Capability for Millimeter-wave Applications." Annals of Telecommunications 56 (2001): 15-26.
Van Hove, M., J. Finders, K. van der Zanden, W. De Raedt, M. Van Rossum, Y. Baeyens, D. Schreurs, and R. Menozzi. "Material and Process Related Limitations of InP HEMT Performance." Materials Science and Engineering B B44 (1997): 311-315.
Parikh, P. A., P. M. Chavarkar, and U. K. Mishra. "GaAs MESFETs on a Truly Insulating Buffer Layer: Demonstration of the GaAs on Insulator Technology." IEEE Elect. Dev. Lett. 18 (1997): 111-113.
Tzeng, S. Y., M. J. Cich, R. Zhao, H. Feick, and E. R. Weber. "Generation-recombination Low-frequency Noise Signatures in GaAs Metal-semiconductor Field Effect Transistors on Laterally Oxidized AlAs." Appl. Phys. Lett. 82 (2001): 1063-1065.
量子结构
Leyronas, X. and M. Combescot. "Quantum Wells, Wires, and Dots with Finite Barrier: Analytical Expressions for Bound States." Solid State Comm. 119 (2001): 631-635.
异质结双极性晶体管 (HBT)
Houston, P. A.. "High-frequency Heterojunction Bipolar Transistor Device Design and Technology." Electronics and Communication Engineering Journal 12 (October 2000): 220-228.
Delage, S. L. "Heterojunction Bipolar Transistors for Millimeter Waves Applications: Trends and Achievements." Annals of Telecommunications 56 (2001): 5-14.
Pedrotti, K., K. Runge, S. Beccue, R. Pierson, A. Price, D. Wu, R. Yu, P. Zampardi, and K. C. Wang. "High-speed HBT Technologies for Optical Communication." In High-Speed Semiconductor Lasers for Communication. Edited by N. S. Kwong, and R. Nagarajan. Proceedings of SPIE 3018 (1997), SPIE, Bellingham, WA. Pp. 198-209, TA1700.H54.
Hurkx, G. A. M. "The Relevance of fT and fmax for the Speed of a Bipolar CE Amplifier Stage." IEEE Trans. Electron Dev. 44, no. 197. Pp. 775-781.
Ashburn, P. "Materials and Technology Issues for SiGe Heterojunction Bipolar Transistors." Materials Science in Semiconductor Processing 4 (2001): 521-527.
这是一个相当新的 Si HBT的综述.
Paul, D. J. "Silicon Germanium Heterostructures in Electronics: The Present and the Future." Thin Solid Films 321 (1998): 172-180.
FETs as well as HBTs. Older but still relevant.
Robertson, I. D., and S. Lucyszyn. RFIC and MMIC Design and Technology. UK: Institute of Electrical Engineers, Herts, 1988.
Older reference but still relevant in general issues and even fabrication technology. Deals with FETs and HBTs.
光电子学：一般教材
Coldren, L. A., and S. W. Corzine. "Diode Lasers and Photonic Integrated Circuits." New York: Wiley Interscience, 1995.
Roencher, E., and B. Vorge. "Optoelectronics." Cambridge, England: Cambridge University Press, 2002.
Chang, Shun Lien. "Physics of Optoelectronic Devices." New York: John Wiley, 1995.
Bhattacharya, Pallab. "Semiconductor Optoelectronic Devices, 2nd ed." Upper Saddle River, New Jersey: Prentice-Hall, 1997.
光学复合过程
Varshni, Y. P. "Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors(I)." Phys. Stat. Sol. 19 (1967): 459-514.
An extensive overview of optical processes in semiconductors, with emphasis on radiative recombination.
Beattle, A. R., P. T. Landsberg. "Auger Effect in Semiconductors." Proceedings of the Royal Society of London, Series A: Mathematical and Physical Sciences 249 (1959): 16-29.
A classic treat is on Auger recombination.
Takeshima, Masumi. "Auger Recombination in InAs, GaSb, InP, and GaAs." J. Appl. Phys. 43 (1972): 4114-4119.
Useful information (material parameters and theory) on Auger recombination in some important binary compounds.
Keevers, M. J., Green, M. A. "Efficiency Improvements of Silicon Solar Cells by the Impurity Photovoltaic Effect." J. Appl. Phys. 75 (1994): 4022-4031.
An interesting proposal for using mid-gap levels to improve device performance (see also the next reference.)
Luque, A., A. Martf. "Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels." Physical Review Letters 78 (1997): 5014-5017.
半导体中的光学色散关系的计算
Adachi, S. "Model Dielectric Constants of GaP, GaAs, SaSb, InP, InAs, InSb." Physical Review B 35 (1987): 7454-7463.
———. "Optical Properties of In1-xGaxAsyP1-y Alloys." Physical Review B 39(1989): 12612-12621.
———. "Optical Dispersion Relations for GaP, GaAs, SaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y." J. Appl. Phys. 66 (1989): 6030-6040.
Linnik, M., and A. Christou. "Calculations of Optical Properties for Quanternary III-V Semiconductor Alloys in the Transparent Region and Above (0.2 - 4.0 eV)." Physica B 318 (2002): 140-161
光子晶体有关论文
Forchel, A., M. Kamp, Reithmaier, et. al. "Photonic Crystals for Optoelectronic Devices." In "Physics and Simulation of Optoelectronic Devices IX." Edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. Proceedings of the SPIE 4283 (2001): 406-414.
Krauss, T. F., and R. M. De La Rue. "Photonic Crystals in the Optical Regime — Past, Present, and Future." Progress in Quantum Electronics 23 (1999): 51-59.
Yablonovitch, E. "Inhibited Spontaneous Emission in Solid-State Physics and Electronics." Physical Review Lett. 58 (1987): 2059-2062.
John, S. "Strong Localization of Photons in Certain Disordered Dielectric Superlattices." Physical Review Lett. 58 (1987): 2486-2489.
Meade, R. D., A. Devenyi, J. D. Joannopoulos, et. al. "Novel Applications of Photonic Band Gap Materials: Low-loss Bends and High G Cavities." J. Appl. Phys. 75 (1994): 4753-4755.
Happ., T. D., M. Kamp, F. Klopf, J. P. Reithmaier, and A. Forchel. "Bent Laser Cavity Based on 2D Photonic Crystal Waveguide." Electronics Letters 36 (2000): 324-325.
Mekis A., J. C. Chen, and I. Kurland, et. al. "High Transmission through Sharp Bends in Photonic Crystal Waveguides." Physical Review Lett. 77 (1996): 3787-3790.
Cheng, C. C., and A. Scherer. "Lithographic Band Gap Tuning in Photonic Bandgap Crystals." J. Vac. Sci. Technol. B 14 (1996): 4110-4114.
Smith, C. J. M., H. Benisty, S. Oliver, et. al. "Low-Loss Channel Waveguides with two-dimensional Photonic Crystal Boundaries." Appl. Phys. Let. 77 (2000): 2813-2815.
Joannopolous, J. D., R. D. Meade, and J. N. Winn. Photonic Crystals: Molding theFlow of Light. Princeton, NJ: Princeton University Press, 1995.
LED一般教材
Bergh, A. A. Light Emitting Diodes. Oxford: Clarendon Press, 1976.
Gillesen, K., and W. Schairer. Light Emitting Diodes: An Introduction. Prentice-Hall, 1987, ASIN 0135365333.
Schubert, E. F. Light Emitting Diodes. Cambidge, England: Cambridge University Press, 2003.
谐振和微腔LED有关论文
Delbeke, D., et. al. "High Efficiency Semiconductor Resonant-cavity Light-emitting diodes: A Review." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 189-206.
Royo, P., et. al. "Analytical Calculation of the Extraction Efficiency of Micro-cavity light-emitting Diodes for Display and Fiber Coupling Applications." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 207-218.
Ryu, H., et. al. "Enhancement of Light Extraction from Two-dimensional Photonic Crystal Slab Structures." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 231-237.
Rattier, M., et. al. "Toward Ultra high-efficiency Aluminum Oxide Microcavity light-emitting Diodes: Guided Mode Extraction by Photonic Crystals." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 238-247.
氮化物LED有关论文
Mukai, T. "Recent Progress in Group-III Nitride Light-emitting Diodes." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 264-270.
Han, J., and A. V. Nurmikko. "Advances in AlGaInN Blue and Ultraviolet Light Emitters." IEEE J. Selected Topics on Quantum Electronics 8 (2002): 289-297.
Orton, J. W., and C. T. Foxton. "Group III Nitride Semiconductors for Short Wavelength Light-emitting Devices." Rev. Prog. Phys. 61 (1998): 1-75.
白光LED和固态照明
Steigerwald, D. A., et. al. "Illumination with Solid State Lighting Technology." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 310-320.
Muthu, S., et al. "Red, Green, and Blue LEDs for White Light Illumination." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 333-338.
荧光材料
Ronda, C. R., T. Juestel, and H. Nikol. "Rare Earth Phosphors: Fundamentals and Applications." Journal of Alloys and Compounds (1998): 275-277 and 669-76.
有机LED
Patel, N. K., S. Cina, and J. H. Burroughes. "High-efficiency Organic Light-emitting Diodes." IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 346-61.
Tessler, N. "Lasers Based on Semiconducting Organic Materials." Advanced Materials 11, no. 5 (1999): 363-70.
Heeger, A. J. "Light Emission from Semiconducting Polymers: Light-emitting Diodes, Light-emitting Electrochemical Cells, Lasers and White Light for the Future." Solid-State-Communications 107 (1998): 673-679.
Kalinowski, J. "Electroluminescence in Organics." Journal of Physics D Applied Physics 32 (1999): R179-249.
硅中的复合过程
Schroder, D. K. "Carrrier Lifetimes in Silicon." IEEE Trans. on Electron Dev. 44 (1997): 160-170.
晶体生长
Moon, R. L. "MOVPE: Is There Any Other Technology for Optoelectronics." Journal of Crystal Growth 170 (1997): 1-10.
激光二极管：一般教材
Coldren, L. A., and S. W. Corzine. Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
The best reference on lasers; the most up to date and comprehensive on in-plane lasers; more limited on VCSELs. For VCSELs see the references below.
Additional sources: See the references given with the laser structures shown onthe slides from Lectures 21, 22, and 23.
VCSEL
Iga, K. "Vertical-Cavity Surface-Emitting Laser - Progress and Prospects." IEICE Trans. Electron. E85-C , no. 1 (2002): 10-20.
Iga is credited with inventing, or at least popularizing, the VCSEL.
Chang, C. H., L. Chrostowski, and C. J. Chang-Hasnain. "Parasitics and Design Considerations on Oxide-Implant VCSELs." IEEE Photonics Technology Letters 13, no. 12 (2001): 1274-1276.
Gustavsson, J. S., J. A. Vukusic, J. Bengtsson, and A. Larsson. "A Comprehensive Model for Modal Dynamics of Vertical-Cavity Surface-Emitting Lasers." IEEE J. Quant. Electr. 38, no. 2 (2002): 203-212.
A good reference on VCSEL small and large signal operation. Complements the material in Coldren and Corzine above.
SPIE Proceedings Vol. 4286, published in 2001 and Vol. 4649, published in 2002 have some good VCSEL articles, including:
Note: SPIE holds annual conferences reviewing many topics in the general area of optoelectronics and publishes the proceedings. These proceedings are often good places to start a search for references.
Stevens, R., et. al. "Quest for Very High-speed VCSELs: Pitfalls and Clues." Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Lei. Proceedings of SPIE 4286 (2001): 71-79.
Wasserbauer, J. G., et. al. "High Speed VCSELs for Next-Generation Telecommunications Links." Vertical-Cavity Surface-Emitting Lasers V. Edited by Kent D. Choquette, and Chun Leis. Proceedings of SPIE 4286 (2001): 80-95.
Grabherr, M., D. Wiedenmann, R. King, R. Jager, and B. Schneider. "Speed it Upto 10 Gb/s and Flip Chip it: VCSELs Today." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 11-18.
Zhang, X., et. al. "Advancements in the Design and Production of VCSELs at AXT." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 111-120.
Eitel, S., et. al. "Multimode VCSELs for High Bit-rate and Transparent Low-costfiber-optic Links." Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 183-190.
Unold, H. J., et. al. "Single-mode VCSELs." In Vertical-Cavity Surface-Emitting Lasers VI. Edited by Chun Lei, and Sean P. Kilcoyne. Proceedings of SPIE 4649 (2002): 218-229.
