The International Microwave Symposium (IMS), June 7-12 at the
Boston Convention & Exhibition Center in Boston, MA, will
feature 430 technical presentations in over 90 sessions,
representing the latest research in the field from around the world
and organized in four technical tracks: Microwave Systems; Active
Components; Passive Components; and Microwave Modeling.
“The topics of the program’s diverse technical presentations range
from components to systems and feature emerging components and
modeling techniques at the research level to state-of-the-art
systems ready to be deployed today,” said IMS2009 Technical Program
Co-chair, Mark Gouker, Leader of the Analog Device Technology
Group, MIT Lincoln Laboratory. “Once again, IMS is the essential
gathering place for all of us in the industry to learn about the
latest developments in research and applications.”
Many significant research breakthroughs will be discussed in this
year’s technical sessions at IMS. Below is a sampling of some of
the important work being presented this year, organized by
technical track. More information is available at www.ims2009.org
Microwave Systems
• Single chip Si CMOS transceivers have been developed for
ultra-wideband (UWB) communication systems that operate in the
worldwide-approved 7.2 to 8.5 GHz operating band. A transceiver
will be detailed, fabricated in 90 nm CMOS, which has the lowest
energy per bit, 33pJ/bit, ever reported to date [TU1D-1].
• A communication system has been demonstrated to support
transcutaneous wireless telemetry within the cardiovascular system.
An implantable stent-based transmitter has been developed using an
integrated 2.4 GHz wireless transmitter, battery, and two FDA
approved stents configured as a dipole radiator [TH3D-1].
• A major milestone will be reported in the development of
microwave technology positioning systems using UWB radar. A system
with operating frequency centered at 8 GHz can determine the
location of objects with an accuracy of 2 mm for static objects and
6 mm for moving objects [TH4C-2]. The IMS will feature the first
report of a direct digital synthesizer (DDS) with output frequency
in the GHz range (2.9 GHz) with both phase and amplitude control.
The integrated circuit is fabricated in a SiGe process with more
than 8,000 transistors and has 9 bits of phase resolution and 7
bits of amplitude resolution [TH1D-1].
Active Components
• The symposium program shows that Gallium Nitride (GaN) amplifiers
continue to push the frontiers of amplifier performance.
Power-added efficiency of 70 percent for linear amplification at
UHF will be reported [WE4A-4]. There is an entire session devoted
to Application of Gallium Nitride Technology from L- to V-band that
includes a report on an L-band 10 W amplifier with 60 to 70 percent
drain efficiencies across a 50 percent bandwidth [WE3A-1] and a 75
to 81 GHz power amplifier with over 12 dBm output power [WE3A-4].
• Silicon CMOS amplifiers continue to make more inroads to rivaling
SiGe technology. WE2A-1 will discuss 0.28 micron technology
silicon-on-insulator CMOS amplifiers at 1.9 GHz that provides 33
dBm output power with a 6.5 V supply voltage. And WE2A-2 will focus
on a 90 nm technology CMOS amplifier at 60 GHz that provides 20 dB
small-signal gain and saturated output power of 12 dBm. A digital
controlled artificial dielectric (DiCAD) differential transmission
line is embedded in 90nm CMOS to digitally tune a 58 to 64 GHz DCO
[WE3C-1]. A single-pole, four-throw (SP4T) switch has been
constructed in 130 nm CMOS with measured insertion loss less than
3.5 db and port-to-port isolation greater than 25 dB up to 67 GHz
[TH1B-2]. Finally, the feasibility of CMOS circuits operating at
frequencies in the upper millimeter-wave and low sub-millimeter
frequency regions will be presented. TU4C-1 will discuss 140 GHz
fundamental mode VCO and a 324 GHz quadruple pushed VCO in 90 nm
CMOS, a 410 GHz push-push VCO in 45 nm CMOS, and 180 GHz Schottky
diode and 780 GHz plasma wave detectors in 130 nm CMOS, which have
been demonstrated.
Passive Components
• Metamaterials continue to attract considerable attention with
several IMS 2009 papers highlighting novel composite
right/left-handed engineered substrates. These materials
demonstrate components smaller than those by conventional design.
Further indicating the potential of this emerging technology,
presentations will report on a 3 dB, backward-wave coupler [TU1F-3]
and diplexers [TU2F-2 and TU1G-3]. Further broadening of the
application of RF MEMS devices is evident in a paper presenting
MEMS-based tuning of an evanescent-mode cavity filter at 5 GHz with
Qs greater than 500 and switch matrices up to 4-by-4 based on
switch elements with less than 2 dB of insertion loss up to 40 GHz
[TH2E-3]. Two new design methodologies for widely tunable filters
in the microwave region will also be presented. The first is a new
class of parallel-coupled switch-delay-line reconfigurable filters
is shown with constant 50 MHz bandwidth tuning across 45 percent
tuning range [WE1F-5]. The second is an evanescent-mode cavity
bandpass filter with adjustable pass band and tuning range ~50
percent [WE2F-1].
Microwave Modeling
• A new formulation of neural network EM modeling that learns the
behavior at the internal interface between decomposed 3D structures
will be presented [WE1G-1].
• Significant improvements in modeling long-term memory effects of
microwave components will be shown in several presentations.
Advances include: extension to the Poly-Harmonic Distortion (PHD)
Model to include dynamics revealed through pulsed measurements
[WE3G-2]; a reformulation of the long-term memory model that
incorporates intermodulation distortion asymmetry [TH3G-1]; and a
more general Volterra series expansion-based model [TH3G-2].
Richard: 这才叫前沿！！
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