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RFMD® Launches GaN Foundry Services  2009-10-12 18:09

RFMD® develops and manufactures unmatched compound semiconductor technologies and is now offering foundry services for our industry-leading 0.5μm GaN on SiC process. RFMD’s world-class manufacturing scale, supported by the largest III-V factory in the world, enables best-in-class cycle times backed by our on-time shipment pledge. RFMD’s track record as a high-volume, reliable supplier has earned us “preferred partner” status with the industry’s top OEMs while our extraordinary level of customer service continues to set us apart from the competition.

RFMD GaN-at-a-Glance

  • 0.5-um gate length HEMT transistor
  • High power density (6 to 8W/mm CW)
  • High breakdown voltage of 200V for 48V CW or 65V pulsed operation
  • High efficiency >65% achieved for RFMD products
  • Ft=11GHz, Fmax=18GHz
  • MTTF>1e8 hours at Tchannel=150 centidegree

RFMD GaN: Multiple Efficiency Benefits:

  • Scale: Build GaN in existing GaAs fabs-scale-driven cost
  • Linearity and Bandwidth: improved performance especially for LTE/WiMAX
  • Green: more power efficient per mW of RF power
  • Power and Size: more RF power per mm^2
  • Opex/Capex: BOM and running costs reduced -- reduced total cost of wonership

Applications benefiting from RFMD GaN technology:

  • Wireless Infrastructure
  • Broadband Communications
  • Defense Communications and Systems
  • CATV Distribution
  • SATCOM

RFMD GaN is production ready. It’s a mature, robust technology with extraordinary reliability. Compared to GaAs and Si, RFMD GaN has much higher breakdown voltage and power densities, enabling applications not possible with competing technology. RFMD’s GaN high power density also allows for smaller devices, reducing the capacitance while enabling high impedances, wider bandwidths, and reduced cost. Additional benefits include reduced circuit complexity, industryleading efficiency of operation, reduced cooling requirements, and lighter weight.

 

 

 
 
 

 

 

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Richard: RFMD也来了,紧随TriQuint(Sep., 2008)。不知后继者是谁?总之,GaAs,LDMOS,你们要小心了,谁让你们是2G,人家是3G呢?

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昨晚婷儿从安徽回来了,不过马上就又要去内蒙,后面还有甘肃排着队。真的很辛苦,慰问一下!

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做学生有一点比较好:很单纯,想说什么就可以说什么--只要是能说的。我不是big mouth,我只说能说的话,呵呵。珍惜最后的学生时光,等工作了就绝不能那么随便了。

有人说我是狂热的工作狂,欣慰又无奈。

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