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  • DDS Output Wave 2009-10-12 16:05
      It's an ultra-high speed Direct Digital frequency-Synthesizer (DDS) with clock frequency of more than 5GHz. The architecture is ROM-less with a sine-weighted nonlinear DAC insteading of the traditional ROM for phase-magnitude convertion. While this can improve the speed of taotal DDS circuit, it can't give as high SFDR as ROM-with architecture does. However, look at the output wave, with 5GHz clock frequency and Frequency-Control-Word of 1, the simulation result show a well-look 19....

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  • Accumulator + Encoder 2009-10-12 16:03
  • EMDS for ADS 2009-10-12 16:00
    The integrated 3D electromagnetic analysis capabilities in Advanced Design System 2008, Update 2, eliminate the need for standalone EM tools and improve productivity. Credit: Agilent EEsof.

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  • 前天Agilent公司来讲座“基于PNA-X的非线性矢量网络分析仪”。众所周知,S参数是小信号的线性参数,所以对于表征器件的特性--尤其是大功率器件来说不是特别精确;而大信号的参数获取,则通常要借助于Load-pull和功率计等测量仪器和手段。这个非线性矢量网络分析仪(NVNA),则可以测量器件的很多非线性特性,它的基本应用包括: 基于矢量校准的示波器; 频域测量; 直流脉冲测量; 射频脉冲测量; 多音激励测量; 多包络域测量; Real HotS22测量; X参数测量和非线性模型提取; ... NVNA提供了“N in 1”的功能--集成更多的功能,而不仅仅...

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  • 毫米波频段是满足日益强烈的高精度探测及高速率数据通信要求的关键资源。继8毫米波段(26.5~40GHz)之后,3毫米波段(75~111GHz)成为世界各国高频技术竞争的制高点。基于固态半导体技术的毫米波单片集成电路(MMIC)由于具有体积小、重量轻、高性能及低成本等优势而被广泛应用于军事和民用领域。InP基异质结双极型晶体管是实现3毫米波段MMIC应用最主要的固态半导体器件,是国际工业界和学术界研究的热点;但由于其高技术门槛,所以目前只有美国和日本等少数发达国家掌握了相关工艺技术。 中国科学院微电子研究所金智研究组对InGaAs/In...

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  • From: http://compoundsemiconductor.net/cws/article/magazine/34662 DARPA's funding has made a staggering contribution to the compound semiconductor community. Novel materials and devices have flowed forth from its programs and opened up lucrative markets for military and commercial applications. Richard Stevenson looks back at the agency's first 50 years. It's hard to imagine where we would be without the US Defense Advanced Research Projects Agency (DARPA). Decades of funding haven't just he...

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  • Coplanar Waveguide 2009-10-12 15:55
    From: microwaves101.com History of Coplanar Waveguide Coplanar waveguide was invented by Cheng P. Wen. It was invented when Wen was at RCA's Sarnoff Laboratories in New Jersey, way back in 1969, just two years after the Summer of Love... Dr. Wen now lives in Beijing, and continues to pass on his considerable knowledge to microwave engineering students, and he has corresponded with Microwaves101 on the topic of CPW (how's that for name dropping?) C.P. Wen explains that his original "name" for...

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  • From: compoundsemiconductor.net  The 324 GHz single stage InP amplifier is an important landmark for SWIFT, the DARPA program hoping to develop advanced imaging systems. High-frequency InP transistors have made a key breakthrough for high-resolution, all-weather imaging, as they have been used to produce the first sub-millimeter wave DHBT monolithic amplifier. Jonathan Hacker of Teledyne Scientific presented the InP DHBT MMIC, at the MTT-S International Microwave Symposium in Atlanta on...

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  • 当然就是匹配网络了。首先看看在HPA MMIC中,匹配网络的作用: Present the optimum source and load impedances to the transistors; Divide or combine the RF power; For the input and interstage-matching network, realise a frequency dependent loss; Supply the DC bias to the transistors; Enhance the stability of the amplifiers. 这最基本的五条,看似简单,但是任意一条拿出来都可以说上一大堆Design Options,比如DC Bias:在MMIC中首先要根据电流大小及金属的最大可承受电流密度,计算其宽度下限,然后再选定宽度的基础...

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  •   The following methods to determine the optimum load impedance were considered: (1). The use of the so-called Cripps method. This method uses a simplified model of the transistor, which can be obtained from small-signal S-parameter measurements at the bias point of interest and knowledge of the DC IV curves. With the help of this information it is possible to construct load-pull contours and the optimum load impedance can be determined. The Cripps method was not used because of the f...

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  • From: compoundsemiconductor.net Cree and TriQuint have both rolled out competing GaN foundry services amid strong interest in the high-power RF technology at the 2008 International Microwave Symposium. In each case military applications are providing a strong driving force in developing GaN devices, attracted by characteristics like high power density and high-temperature operation. Both companies are still involved in DARPA's Wide Bandgap Semiconductor Technology initiative, with TriQuint i...

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  • From: eetchina.com LTE和WiMax之间唯一最重要的相似性在于均采用正交频分复用(OFDM)信令。两种技术也均采用Viterbi和turbo加速器来实现前向纠错。 从芯片设计工程师的观点来看,如果你要在同一芯片或芯片组内支持两种制式的话,就非常有可能广泛地重用各种门。从软件无线电(SDR)的观点来看,机会更为诱人。灵活性、门重用以及可编程性似乎就是应对WiMax-LTE多模式挑战的答案,而那可能意味着要采用软件无线电技术。 LTE和WiMax可能就是OFDM这颗“蚕豆”上的“两片豆子”,但是,它们并不是孪生的。它们之间存在三个重要差异: 1. 两者...

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  • Power Amplifier MMIC Flow 2009-10-12 15:11
    1. Determine Optimum Bias Point for Required Output Power; 2. Design of Biasing Network; 3. Transistor Stability Analysis, Zsource Calculation for MAG; 4. Load-pull Analysis to Determine Optimum Zload for Required Pout; 5. Design of Matching Network; 6. Optimization, Yield Analysis and Design Centering; 7. Layout Gneration (EM Analysis); 8. Verification for Wireless Communication Standard.

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  • 长叹一口气......该死的VBIC模型,终于可以不再折磨我那少得可怜的脑细胞了。 湖哥走的时候将MMIC PA的工作留给我,到现在他毕业整整一年了,但是工作几乎停滞不前。电路的拓扑结构和工艺早就OK了,但是在设计的时候没有HBT器件模型,没有Load-pull测试数据--当我试图去做这些的时候,我们微波探针台上的探针挂了,Load-pul只要一加电就振荡。知道上月,卡尔休斯的探针和新的Load-pull系统都到位,于是数据搞定了。测试比较简单--只要你有测试手段,问题是测试之后的数据处理,譬如提取模型参数、设计匹配网络等等。 那么,当下最要紧的是...

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  • From: compoundsemiconductor.net Cracks are starting to appear in silicon CMOS. Although the International Technology Roadmap for Semiconductors states that MOSFETs with strained silicon channels will be suitable down to the 22 nm node and possibly beyond, projections of device performance indicate otherwise. Studies show a gap will appear between projected and actual performances as node sizes fall to less than 65 nm, and this will only get wider with increased scaling (figure 1). To make ma...

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