- 工作电压 : 2.7 V ~ 3.6 V
- Organization
- Memory Cell Array : (1G + 32M)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60μs(Max.)
- Serial Access : 30ns(Min.)
- Memory Cell : 2bit / Memory Cell
- Fast Write Cycle Time
- Program time : 800μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
- Command/Address/Data Multiplexed I/O Port
- 硬件数据保护
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
- Command Register Operation
- Unique ID for Copyright Protection
- 封装: 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)