Recently, two additional SiC module projects in China have accelerated their production launch, focusing on the production and packaging and testing of automotive-grade power modules:
Jingneng Micro: The second phase of the Wenling automotive-grade SiC packaging and testing base project has entered the final sprint stage;
Grecon Semi: The SiC power device project has officially broken ground, and 6 new SiC module packaging and testing lines will be built.
Jingneng Micro: Wenling SiC Project Enters Final Stage
On September 10, according to the Wenling Daily, the construction of the second phase of the automotive-grade semiconductor packaging and testing base of Zhejiang Jingneng Microelectronics Co., Ltd. has achieved phased breakthroughs. The main structure of the factory building has been basically completed, and paving operations are being carried out in an orderly manner. The overall project has entered the final sprint stage.
It is reported that the project is located in Wenling, Taizhou, Zhejiang Province, with a total land area of approximately 15,000 square meters and a total construction area of about 34,000 square meters. It will focus on the development and packaging and testing of its own automotive-grade power devices, and will subsequently expand into the R&D of SiC modules for solid-state transformers. A person in charge of the Wenling New City Development Zone stated that currently, the overall outdoor ancillary works of the project have been 96% completed.
According to previous disclosures by "Wenling Release", in May 2023, the Wenling New City Development Zone successfully signed an agreement with Zhejiang Jingneng Microelectronics Co., Ltd. for the automotive-grade semiconductor packaging and testing base project, which is implemented in two phases. The first phase expansion project mainly involves the construction of an advanced packaging production line for automotive-grade Si/SiC devices. It officially went into production in June 2024, with an expected annual production of over 396 million discrete components, and the annual output value is expected to exceed CNY 200 million. The second phase project is planned to start construction in the third quarter of 2024 and go into production in 2026.
In addition to Wenling, Jingneng Microelectronics has also laid out production bases in Yuhang and Xiuzhou, as detailed below:
Yuhang Base: Annual production of 600,000 sets of SiC power modules
The Yuhang Base is an important manufacturing base laid out by Jingneng Microelectronics in its early stages. According to the completed environmental protection acceptance information published in December 2024, the technical transformation project of the first phase factory at this base has been completed and put into production, with an annual capacity of 600,000 sets of SiC power modules.
The project is located in the Qianjiang Economic Development Zone in Hangzhou, with a total investment of over CNY 300 million. The construction includes a 3,000-square-meter Class 10,000 cleanroom and laboratory, a 1,000-square-meter power station, and related warehousing and office facilities.
Xiuzhou Base: Annual capacity of 600,000 sets of automotive-grade power modules
Located in the Jiaxing National High-tech Zone, the Xiuzhou Base is Jingneng's third specialized production base after Yuhang and Wenling. Covering an area of 95.4 mu, the Xiuzhou Base broke ground in February 2024. Its first-phase production line officially went into production in October 2025, with the first SiC power module rolled off the line simultaneously. The planned annual capacity for the first phase reaches 600,000 sets of automotive-grade power modules.
Zhejiang Jingneng Microelectronics Co., Ltd. is a power semiconductor enterprise under Geely Technology Group. Founded in 2022, it possesses comprehensive capabilities in "chip design + module manufacturing + automotive-grade certification". In May this year, Jingneng Micro revealed on its official WeChat account that the delivery volume of its self-developed SiC power modules has reached new highs for 12 consecutive months. Combined with previous reports by "Third-Generation Semiconductor Insights", Jingneng Micro has set both the capacity and delivery targets for its SiC MOS power modules in 2026 at 600,000 sets.
Grecon Semi: Building 6 New SiC Module Packaging and Testing Lines
On September 11, the "Yueyang Lingang High-tech Zone" announced that the Grecon Semi SiC power device project has officially broken ground in Yueyang, Hunan Province, and 6 new SiC module packaging and testing lines will be built.
It is reported that the project focuses on the manufacturing of automotive-grade power semiconductor modules. The 6 SiC module packaging and testing lines will be constructed in two phases, with 3 lines in the first phase, supported by high-standard cleanrooms and a Manufacturing Execution System (MES) to build a digitalized and intelligent packaging and testing platform. The products are mainly applied in fields such as NEVs (New Energy Vehicles), industrial control, and photovoltaic energy storage.
According to previous reports by "Third-Generation Semiconductor Insights", in recent years, Grecon Semi has been steadily advancing SiC cooperation and capacity layout:
On April 27 this year, Grecon Semi announced that it has reached a SiC module foundry cooperation agreement with United Nova Technology (UNT). According to the agreement, Grecon Semi will provide SiC module packaging, testing, and reliability verification services for UNT, while UNT will provide product definition and wafer capacity support.
In January 2025, Grecon Semi completed a Series B+ financing round of hundreds of millions of CNY, and the funds will be invested in the capacity expansion and market layout of IGBT&SiC modules.
Founded in May 2018, Grecon Semi mainly engages in the production of IGBT modules and SiC modules for domestic NEVs. As of December 2024, the automotive-grade IGBT and SiC modules of Grecon Semi have been mass-produced for over 6 OEMs and more than 10 Tier 1 customers. Meanwhile, they have moved into the third-phase park as scheduled and possessed the production capacity to achieve an annual output of 3 million sets of power device modules.
This article is published by [Hangjiashuo Sandaiban], focusing on industry observations of third-generation semiconductors (SiC and GaN).