The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency
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扫码加入ARCHIVED - AFT21S140W02SR3, AFT21S140W02GSR3 2110-2170 MHz, 32 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet
The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency
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