The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency
The AFT21S140W02S and AFT21S140W02GS 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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AEQ2234 | 1 | Dielectric Laboratories Inc | RC Network, |
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$22.65 | 查看 | |
BSS139H6327XTSA1 | 1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
ECAD模型 下载ECAD模型 |
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$0.54 | 查看 | |
CRCW06031R00FKEA | 1 | Vishay Intertechnologies | Fixed Resistor, Metal Glaze/thick Film, 0.1W, 1ohm, 75V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 0603, CHIP, HALOGEN FREE AND ROHS COMPLIANT |
ECAD模型 下载ECAD模型 |
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$0.14 | 查看 |
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