The MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use
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扫码加入ARCHIVED - MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs - Data Sheet
The MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use
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