芯耀
与非AI
Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
阅读全文
132
扫码加入MRF7S18125AHR3, MRF7S18125AHSR3 1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
人工客服
© 2010 - 2026 苏州灵动帧格网络科技有限公司 版权所有
ICP经营许可证 苏B2-20140176 | 苏ICP备14012660号-6 | 苏公网安备 32059002001874号
扫码关注
扫码加入
电子硬件助手
元器件查询
