The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
---|---|---|---|---|---|---|---|---|
C1206C107M9PACTU | 1 | KEMET Corporation | Capacitor, Ceramic, Chip, General Purpose, 100uF, 10V, ±20%, X5R, 1206 (3216 mm), Sn/NiBar, -55º ~ +85ºC, 7" Reel/Unmarked |
ECAD模型 下载ECAD模型 |
|
$1.6 | 查看 | |
SS14L | 1 | HY Electronic Corp | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon |
|
|
$0.11 | 查看 | |
BTA25-600BW | 1 | STMicroelectronics | 25A standard and Snubberless™ Triacs |
|
|
$9.17 | 查看 |
01/22 09:54
01/22 09:50
01/22 09:27
01/22 09:24
01/22 09:21
01/16 10:43
01/10 14:26
01/09 18:37
01/08 18:39
01/08 18:34
01/08 18:31
01/08 18:26
01/08 17:56
01/05 14:15
01/05 14:06
01/05 13:59
01/05 13:48
01/05 13:45
01/05 13:41
01/05 13:39