RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.
RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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BT136S-600E,118 | 1 | WeEn Semiconductor Co Ltd | 4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3/2 |
ECAD模型 下载ECAD模型 |
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$0.89 | 查看 | |
VLCF5020T-2R2N2R6-3 | 1 | TDK Corporation of America | General Purpose Inductor, 2.2uH, 30%, 1 Element, Ferrite-Core, SMD, 2020, HALOGEN FREE AND ROHS COMPLIANT |
ECAD模型 下载ECAD模型 |
|
$0.95 | 查看 | |
XFL4020-222MEC | 1 | Coilcraft Inc | General Purpose Inductor, 2.2uH, 20%, 1 Element, Metal Composite-Core, SMD, 4040-20M, CHIP, 4040-20M |
ECAD模型 下载ECAD模型 |
|
$4.26 | 查看 |
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