A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations
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A3G26H200W17S 2496-2690 MHz, 34 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations
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