RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications.
RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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TT330N16KOF | 1 | Infineon Technologies AG | Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-7 |
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$360.61 | 查看 | |
0532610871 | 1 | Molex | Board Connector, 8 Contact(s), 1 Row(s), Male, Right Angle, Surface Mount Terminal, ROHS COMPLIANT |
ECAD模型 下载ECAD模型 |
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$1.98 | 查看 | |
P410QM223M250AH101 | 1 | KEMET Corporation | RC Network, Isolated, 100ohm, 0.022uF, Through Hole Mount, 2 Pins, RADIAL LEADED, ROHS COMPLIANT |
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暂无数据 | 查看 |
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