Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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CRCW1206100RFKEAC | 1 | Vishay Intertechnologies | Fixed Resistor, Metal Glaze/thick Film, 0.25W, 100ohm, 200V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP |
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$0.08 | 查看 | |
C0603C103K5RACAUTO | 1 | KEMET Corporation | Capacitor, Ceramic, Chip, General Purpose, 0.01uF, 50V, ±10%, X7R, 0603 (1608 mm), -55º ~ +125ºC, Bulk |
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$0.15 | 查看 | |
IPD90P04P4L04ATMA2 | 1 | Infineon Technologies AG | Power Field-Effect Transistor, |
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暂无数据 | 查看 |
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