Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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TNPW060310K0BEEA | 1 | Vishay Intertechnologies | RESISTOR, THIN FILM, 0.1W, 0.1%, 25ppm, 10000ohm, SURFACE MOUNT, 0603, CHIP, ROHS COMPLIANT |
ECAD模型 下载ECAD模型 |
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$0.79 | 查看 | |
1N4007GP-AQ | 1 | Diotec Semiconductor AG | Rectifier Diode, |
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$0.04 | 查看 | |
EEVFK1E102Q | 1 | Panasonic Electronic Components | Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 25V, 20% +Tol, 20% -Tol, 1000uF, Surface Mount, 5353, CHIP |
ECAD模型 下载ECAD模型 |
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$1.85 | 查看 |
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