The AFT23S160W02S and AFT23S160W02GS 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering
The AFT23S160W02S and AFT23S160W02GS 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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2N7002ET1G | 1 | onsemi | N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL |
ECAD模型 下载ECAD模型 |
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$0.18 | 查看 | |
BTA16-800CW3G | 1 | onsemi | Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 16 A IT(RMS) 800 V, TO-220 3 LEAD STANDARD, 50-TUBE |
ECAD模型 下载ECAD模型 |
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$1.69 | 查看 | |
TIC106M-S | 1 | Bourns Inc | Silicon Controlled Rectifier, 3200mA I(T), 600V V(DRM) |
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暂无数据 | 查看 |
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