MMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
MMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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CRCW060349R9FKEAHP | 1 | Vishay Intertechnologies | Fixed Resistor, Metal Glaze/thick Film, 0.25W, 49.9ohm, 75V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 0603, CHIP, HALOGEN FREE AND ROHS COMPLIANT |
ECAD模型 下载ECAD模型 |
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$0.2 | 查看 | |
IPP65R190CFDAAKSA1 | 1 | Infineon Technologies AG | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN |
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$5.46 | 查看 | |
74435572200 | 1 | Wurth Elektronik | General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 7272, CHIP, 7272, ROHS AND REACH COMPLIANT |
ECAD模型 下载ECAD模型 |
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$1.19 | 查看 |
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